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IRLBD59N04E
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
40
–––
–––
0.044
–––
–––
V V GS = 0V, I D = 250μA
V/ ° C Reference to 25 ° C, I D = 1mA
?
R DS(on)
V GS(th)
V GS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Clamp Voltage
–––
–––
1.0
10
–––
–––
–––
–––
0.018 V GS = 10V, I D = 35A
0.021 V GS = 5.0V, I D = 30A
2.0 V V DS = V GS , I D = 250μA
20 V I GSS = 20μA
g fs
Forward Transconductance
29
–––
–––
S V DS = 25V, I D = 35A
I DSS
I GSS
Q g
Q gs
Q gd
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
25 V DS = 40V, V GS = 0V
μA
250 V DS = 32V, V GS = 0V, T J = 150 ° C
1.0 V GS = 5.0V
μA
-1.0 V GS = -5.0V
50 I D = 35A
13 nC V DS = 32V
18 V GS = 5.0V, See Fig. 6 and 13
t d(on)
Turn-On Delay Time
–––
7.8
–––
V DD = 20V
t r
t d(off)
Rise Time
Turn-Off Delay Time
–––
–––
84
33
–––
–––
ns
I D = 35A
R G = 5.1 ? ,
t f
Fall Time
–––
67
–––
V GS = 5.0V ,
See Fig.10
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
2.0
5.0
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
Input Capacitance
–––
2190 –––
V GS = 0V
C oss
Output Capacitance
–––
670
–––
V DS = 25V
C rss
Reverse Transfer Capacitance
–––
130
–––
pF
? = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
––– –––
––– –––
59
230
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
Diode Forward Voltage
––– –––
1.3 V T J = 25 ° C, I S = 35A, V GS = 0V
t rr
Q rr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
57 86 ns T J = 25 ° C, I F = 35A
84 130 nC di/dt = 100A/μs
t on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
Sense Diode Rating
Parameter
Min. Typ. Max. Units
Conditions
V FM
Sense Diode Maximum Voltage Drop
675
–––
725 mV I F = 250μA, T J = 25 ° C
? V F / ? T J
2
Sense Diode Temperature Coefficient
-1.30 -1.40 -1.58 mV/ ° C I F = 250μA, (T J = 25 ° C and 160 ° C)
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